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Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Special Notice monitored from sam-gov.
- Buyer / agency
- NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
- Notice type
- Special Notice
- Solicitation number
- 80NSSC27946811Q
- Posted
- October 13, 2026
- Response deadline
- October 16, 2026
- Location
- OH, US
- Estimated value
- Not published by the source
- NAICS
- 334413
- Source
- sam-gov
Summary
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA�s Technical End User Team. We are currently only requesting Capability Statements.
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